Hybrid normally-off AlGaN/GaN HEMT using GIT technique with a p-region below the channel - Archive ouverte HAL
Communication Dans Un Congrès Année : 2014

Hybrid normally-off AlGaN/GaN HEMT using GIT technique with a p-region below the channel

Résumé

Gallium nitride based High Electron Mobility Transistors (HEMT) are powerful candidates for high frequency and high power applications. Unfortunately, while switching applications demand normally-off operation, these devices are normally-on. In this paper, after calibrating the simulator using experimental data, we address the advantages and drawbacks of two normally-off HEMT devices: the previously proposed Gate Injection Transistor (GIT) and our newly proposed HEMT with a p-GaN region below the channel. Afterwards, an hybrid normally-off HEMT is proposed, combining both techniques, aiming to merge their advantages and remedying their drawbacks.

Domaines

Electronique
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Dates et versions

hal-01054235 , version 1 (06-08-2014)

Identifiants

  • HAL Id : hal-01054235 , version 1

Citer

Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle. Hybrid normally-off AlGaN/GaN HEMT using GIT technique with a p-region below the channel. CSW 2014, May 2014, Montpellier, France. ⟨hal-01054235⟩
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