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Conference Papers Year : 2014

[Invited] High frequency electronic devices : impact of beyond graphene materials


Considering graphene field effect transistors (GFETs), considerable efforts have been made during the recent years to reach impressive current gain cut-off frequency (ft) over 400 GHz. Unfortunately, for these devices, the maximum frequency of oscillation (fmax) remains under 100GHz. This deviation of the ratio fmax/ft is a drawback for HF applications. Based on the small signal equivalent circuit, the presentation will focus on the methodologies to overcome these limitations, by introducing new 2D materials in the fabrication process. One of the most urgent is the limitation imposed due to the underlying substrate. Graphene's intrinsic performances are achieved due to its 2D gas of massless dirac fermions and these could be drastically effected by the use of deficient substrates inducing high amount of scattering due to surface roughness, interfacial phonons,.... Therefore, much effort on developing the process technology is required such as pairing graphene to h-BN material.
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hal-01044773 , version 1 (24-07-2014)


  • HAL Id : hal-01044773 , version 1


Henri Happy, D. Mele, Ivy Colambo, Mohamed Salah Khenissa, Mohamed Moez Belhaj, et al.. [Invited] High frequency electronic devices : impact of beyond graphene materials. 62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK - Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications, 2014, Tampa, FL, United States. ⟨hal-01044773⟩
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