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Article Dans Une Revue Advanced Materials Research Année : 2014

Optical properties of gallium nitride heterostructures grown on silicon for waveguiding application

Résumé

Gallium nitride (GaN) on silicon (Si) is governed by the possibility to use this family of semiconductor for novel optoelectronic devices. GaN layers are deposited by MOCVD on silicon Si (111) using AlGaN buffer layer. We have studied the microstructure quality of the films. From SEM, TEM and AFM observations, we have observed that the films exhibit a good quality: the films are highly oriented (0001) with a smooth surface morphology (roughness of 12nm). We have completely characterized the optical properties using the prism coupling technique.
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Dates et versions

hal-01020484 , version 1 (08-07-2014)

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Irma Saraswati, Arnaud Stolz, S. Ko, El Hadj Dogheche, Nji Raden Poespawati, et al.. Optical properties of gallium nitride heterostructures grown on silicon for waveguiding application. Advanced Materials Research, 2014, 980, pp.41-45. ⟨10.4028/www.scientific.net/AMR.980.41⟩. ⟨hal-01020484⟩
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