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Communication Dans Un Congrès Année : 2014

Modeling of GaN Schottky diodes

Résumé

GaN-based Schottky diodes for microwave, millimeter-wave power applications were characterized and modeled. The modeling technique employed dummy structure to derive parasitic elements introduced by access pads. Intrinsic elements were extracted by fitting junction capacitance for fixed grading factor of 0.5. Error function with physically meaning was used to fine tuning the resulted equivalent circuit model. The extracted model agrees well with the measurement results.
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Dates et versions

hal-01020469 , version 1 (08-07-2014)

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  • HAL Id : hal-01020469 , version 1

Citer

Chong Jin, Etienne Okada, Marc Faucher, Damien Ducatteau, Mohamed Zaknoune, et al.. Modeling of GaN Schottky diodes. 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020469⟩
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