Modeling of GaN Schottky diodes
Résumé
GaN-based Schottky diodes for microwave, millimeter-wave power applications were characterized and modeled. The modeling technique employed dummy structure to derive parasitic elements introduced by access pads. Intrinsic elements were extracted by fitting junction capacitance for fixed grading factor of 0.5. Error function with physically meaning was used to fine tuning the resulted equivalent circuit model. The extracted model agrees well with the measurement results.