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Communication Dans Un Congrès Année : 2014

InAs based Esaki tunnel diodes

Résumé

We present simulation results of InAs based Esaki tunnel diodes. InAs homojunction and InAs/AlGaSb heterojunction are considered and we investigate the role of source and drain doping levels as well as band energy discontinuities on the tunneling current of the device. The results are very promising for tunnel FET transistor applications with high ON-state current.
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Dates et versions

hal-01018430 , version 1 (04-07-2014)

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  • HAL Id : hal-01018430 , version 1

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Vinay Kumar Chinni, L. Desplanque, Mohamed Zaknoune, Xavier Wallart. InAs based Esaki tunnel diodes. 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018430⟩
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