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Communication Dans Un Congrès Année : 2014

Characterization of InxGa1-xN/GaN MQWs heterostructures for solar cells applications

Résumé

The high quality and high indium content InxGa1-xN/GaN (x~ 0.10 and x~0.30) multiple quantum wells (MQWs) grown on sapphire (0001) by metal-organic chemical vapor deposition (MOCVD) were investigated by High Angle Annular Dark Field Scanning Transmission Electron Microscopy (HAADF-STEM), Energy dispersive X-ray spectroscopy (EDX) and Atomic Force Microscopy (AFM). It was found that both designs with fully strained 25 cycles InGaN/GaN MQW epilayers shows very low defect density and excellent structural quality showing that they are highly promising for future applications such as solar cells.
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Dates et versions

hal-01018409 , version 1 (04-07-2014)

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  • HAL Id : hal-01018409 , version 1

Citer

Ezgi Dogmus, Ludovic Largeau, Natalie Rolland, F Medjdoub. Characterization of InxGa1-xN/GaN MQWs heterostructures for solar cells applications. 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018409⟩
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