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Article Dans Une Revue Applied Physics Letters Année : 2014

Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Résumé

We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200 GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain-to-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz0.5 at 200 GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2-2 THz is in good agreement with the theory.
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hal-01018293 , version 1 (27-05-2022)

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Y. Kurita, Guillaume Ducournau, D. Coquillat, A. Satou, K. Kobayashi, et al.. Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics. Applied Physics Letters, 2014, 104 (25), pp.251114. ⟨10.1063/1.4885499⟩. ⟨hal-01018293⟩
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