High polarization high breakdown voltage AlN/GaN-on-silicon transistors - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

High polarization high breakdown voltage AlN/GaN-on-silicon transistors

Résumé

We have developed a back-side process on AlN/GaN-on-Si DHFETs in order to drastically enhance their electrical performances. With a buffer thickness of 1.8 μm, the Si substrate has been locally etched up to the buffer layers between the drain and the gate. After local silicon removal, the three-terminal breakdown voltage increased from 750 V to 1900 V for a gate-drain distance of 15 μm despite the very high 2DEG density (2.3×10^13cm-2). Extremely low specific on-resistance (1.6 mΩ.cm²) was maintained by keeping the trenches narrow in order to avoid a strong degradation of the thermal dissipation.
Fichier non déposé

Dates et versions

hal-01006455 , version 1 (16-06-2014)

Identifiants

  • HAL Id : hal-01006455 , version 1

Citer

Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub. High polarization high breakdown voltage AlN/GaN-on-silicon transistors. 38th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2014, 2014, Delphi, Greece. 2 p. ⟨hal-01006455⟩
105 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More