InxGa1-xN/GaN MQWs heterostructures for solar cells applications
Résumé
The high quality and high indium content InxGa1-xN/GaN (x~ 0.10 and x~0.30) multiple quantum wells (MQWs) grown on sapphire (0001) by metal-organic chemical vapor deposition (MOCVD) were investigated by High Angle Annular Dark Field Scanning Transmission Electron Microscopy (HAADF-STEM), Energy dispersive X-ray spectroscopy (EDX) and Atomic Force Microscopy (AFM). It was found that both designs with fully strained 25 cycles InGaN/GaN MQW epilayers shows very low defect density and excellent structural quality showing that they are highly promising for future applications such as solar cells.