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Communication Dans Un Congrès Année : 2014

InxGa1-xN/GaN MQWs heterostructures for solar cells applications

Résumé

The high quality and high indium content InxGa1-xN/GaN (x~ 0.10 and x~0.30) multiple quantum wells (MQWs) grown on sapphire (0001) by metal-organic chemical vapor deposition (MOCVD) were investigated by High Angle Annular Dark Field Scanning Transmission Electron Microscopy (HAADF-STEM), Energy dispersive X-ray spectroscopy (EDX) and Atomic Force Microscopy (AFM). It was found that both designs with fully strained 25 cycles InGaN/GaN MQW epilayers shows very low defect density and excellent structural quality showing that they are highly promising for future applications such as solar cells.
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Dates et versions

hal-01006446 , version 1 (16-06-2014)

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  • HAL Id : hal-01006446 , version 1

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Ezgi Dogmus, Ludovic Largeau, Nathalie Rolland, F Medjdoub. InxGa1-xN/GaN MQWs heterostructures for solar cells applications. 38th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2014, 2014, Delphi, Greece. 2 p. ⟨hal-01006446⟩
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