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              <p>Dans ce papier, une étude est proposée afin de trouver une alternative à la technologie IGBT 1200 Volts avec une technologie MOS innovante. Quatre technologies sont présentées et comparée : L'UMOSFET, l'OBUMOSFET, le SJVDMOSFET et le DTMOSFET. Une étude comparative, à l'aide de simulations 2D, des structures de même tenue en tension nous a permis d'écarter certaines technologies, incapable de concurrencer les performances statiques d'un IGBT 1200Volts</p>
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