In this paper, the "FLoating Island" concept has been implemented on silicon: a FLIDiode has been built for the first time. Experimental results confirm the predictive 2D simulations: this new diode exhibits an important breakdown voltage (about 95 Volts) with a N- epitaxial layer doping concentration (1.1 x 1016 cm-3) usually dedicated to 50 Volts devices. These measurements validate the "FLoating Island" concept and the efficiency of the original edge cell that will be used in the FLIMOS technology: it can be expected that the specific onresistance of the FLIMOSFET will be drastically reduced compared to the conventional VDMOSFET.