Reliability of submicron InGaAs/InP DHBT on Accelerated Aging Tests under Thermal and Electrical stresses - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2011
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hal-01002459 , version 1 (06-06-2014)

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  • HAL Id : hal-01002459 , version 1

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G. A. Koné, B. Grandchamp, C. Hainaut, F. Marc, C. Maneux, et al.. Reliability of submicron InGaAs/InP DHBT on Accelerated Aging Tests under Thermal and Electrical stresses. 22th European Symposium on the RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Oct 2011, bordeaux, France. pp.1-4. ⟨hal-01002459⟩
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