New hybrid vehicles will probably use high voltage batteries (150 to 200 Volts). For these future automotive applications, the development of 600 Volts power MOSFET switches exhibiting low on-resistance is desired. The "Deep Trench SuperJunction" MOSFET (DT-SJMOSFET) is one of the new candidates. In this paper, a comparative theoretical study, using 2D simulations, shows that the DT-SJMOSFET should be a challenger to the conventional SJMOSFET in terms of "specific on-resistance / breakdown voltage" trade-off. Simulations of the DT-SJMOSFET breakdown voltage versus the technological parameters exhibit the difficulties to fabricate the device. Finally, an original edge cell is proposed that contains the peripheral potential.