Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2012

Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests

Fichier non déposé

Dates et versions

hal-01002159 , version 1 (05-06-2014)

Identifiants

  • HAL Id : hal-01002159 , version 1

Citer

G. A. Koné, B. Grandchamp, C. Maneux, N. Labat, T. Zimmer, et al.. Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests. International Conference on Indium Phosphide and Related Materials (IPRM), 2012, Aug 2012, santa barbara, United States. pp.208-211. ⟨hal-01002159⟩
22 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More