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Communication Dans Un Congrès Année : 2013

Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology

Résumé

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the obtained transit delay contributions, the effective electron velocity is estimated to 0.85×107 cm.s-1. In addition, the effect of the image charge on the drain delay is experimentally demonstrated through the extraction of the mirroring coefficient α close to the predicted simulation value.
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Dates et versions

hal-00997378 , version 1 (28-05-2014)

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Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, et al.. Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology. 43rd European Solid-State Device Research Conference, ESSDERC 2013, 2013, Bucharest, Romania. pp.57-60, ⟨10.1109/ESSDERC.2013.6818818⟩. ⟨hal-00997378⟩
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