Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits Année : 2013

Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs

Résumé

The impact of different dielectrics has been compared in UTBOX SOI nMOSFETs, focusing on the lowfrequency noise behaviour. High-k devices have shown higher current noise spectral density due to the higher number of traps that also degrades the front-channel mobility. The back interface presents similar performance in both SiO2 and high-k wafers while generation-recombination (GR) centers have been noticed in the SiO2 devices ascribed to traps presented in the silicon film.
Fichier principal
Vignette du fichier
hal-00994159.pdf (1.43 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00994159 , version 1 (22-07-2014)

Identifiants

  • HAL Id : hal-00994159 , version 1

Citer

S.D. dos Santos, E. Simoen, V. Strobel, Bogdan Cretu, Jean-Marc Routoure, et al.. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. 9th Workshop of the Thematic Network on SOI Technology, Devices and Circuits, Jan 2013, Paris, France. 2 p. (CDROM). ⟨hal-00994159⟩
86 Consultations
73 Téléchargements

Partager

Gmail Facebook X LinkedIn More