A Compact Wideband High Power Amplifier in GaN Technology with 47% peak PAE
Résumé
This article presents a 4-6GHz power amplifier in a 0.25µm GaN integrated technology from UMS foundry. Two unit power cells are combined to increase output power. A new power combiner based on a stacked balun is presented. It has the advantage of occupying a much smaller area than a conventional one. The measured circuit exhibits a peak output power of 37 dBm together with a peak PAE of 47% at 4GHz
Domaines
Electronique
Fichier principal
A_Compact_4GHz_to_6GHz_High_Power_Amplifier_in_GaN_Technology_FINAL.pdf (999.87 Ko)
Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...