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Communication Dans Un Congrès Année : 2014

A Compact Wideband High Power Amplifier in GaN Technology with 47% peak PAE

Résumé

This article presents a 4-6GHz power amplifier in a 0.25µm GaN integrated technology from UMS foundry. Two unit power cells are combined to increase output power. A new power combiner based on a stacked balun is presented. It has the advantage of occupying a much smaller area than a conventional one. The measured circuit exhibits a peak output power of 37 dBm together with a peak PAE of 47% at 4GHz

Domaines

Electronique
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Dates et versions

hal-00991882 , version 1 (16-05-2014)

Identifiants

  • HAL Id : hal-00991882 , version 1

Citer

Victor Dupuy, Nathalie Deltimple, Eric Kerhervé, Jean-Philippe Plaze, Yves Mancuso, et al.. A Compact Wideband High Power Amplifier in GaN Technology with 47% peak PAE. IEEE IWS 2014, Mar 2014, China. ⟨hal-00991882⟩
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