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Communication Dans Un Congrès Année : 2013

Polarization engineering of AlGaN/GaN HEMTs for high power applications at 40 GHz

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hal-00987957 , version 1 (07-05-2014)

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Stéphanie Rennesson, François Lecourt, N. Defrance, M. Chmielowska, S. Chenot, et al.. Polarization engineering of AlGaN/GaN HEMTs for high power applications at 40 GHz. Joint 5th International Workshop on Silicon Carbide Hetero-Epitaxy and 5th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC-WASMPE 2013, 2013, Nice, France. ⟨hal-00987957⟩
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