Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz - Archive ouverte HAL
Communication Dans Un Congrès Année : 2013

Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz

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https://hal.science/hal-00987956

Soumis le : mercredi 7 mai 2014-08:51:27

Dernière modification le : vendredi 1 mars 2024-18:20:03

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hal-00987956 , version 1 (07-05-2014)

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Stéphanie Rennesson, M. Chmielowska, S. Chenot, Yvon Cordier, François Lecourt, et al.. Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz. 10th International Conference on Nitride Semiconductors, ICNS-10, 2013, Washington, DC, United States. ⟨hal-00987956⟩

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