Kink effect characterization in AlGaN/GaN HEMTs by DC and Drain Current Transient measurements
Résumé
This study reports on the detection and the characterization of parasitic effects of AlGaN/GaN HEMTs on SiC substrate. First, experimental conditions impact and temperature effects on static IDS(VDS) characteristics are studied between 160 and 390K. Then, dependences on temperature, electric field and integration time of the kink effect are demonstrated with DC and pulsed measurements. Two traps are identified by isothermal drain current transient spectroscopy; an emission process and a capture process with activation energy of 0.58eV and 0.64eV respectively.