Selective Epitaxial Growth for Buried Microchannels in Monocrystalline Silicon
Résumé
A simple and single-step technique is presented for the formation of buried channels in monocrystalline silicon wafers. The channels are formed by surface migration of silicon during the selective epitaxial growth of monocrystalline silicon. Various buried-channel shapes and sizes from 1 to 30 µm were formed. This technique is compatible with semiconductor industry processes and allows postprocessing for the integration of microelectronics circuits. The applications targeting heat pipes for integrated circuits or microfluidic channels for microsystems are numerous and promising.