Evidence of charge carrier number fluctuations by low frequency noise measurements in MBE grown Indium Nitride layers - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2011
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hal-00979292 , version 1 (15-04-2014)

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  • HAL Id : hal-00979292 , version 1

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Geeta Rani Mutta, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, M.A. Sanchez-Garcia, et al.. Evidence of charge carrier number fluctuations by low frequency noise measurements in MBE grown Indium Nitride layers. E-MRS 2011 Spring meeting (Symposium H: Indium nitride and related alloys), May 2011, nice, France. ⟨hal-00979292⟩
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