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Communication Dans Un Congrès Année : 2013

Mutual thermal coupling in SiGe:C HBTs

Résumé

This paper studies the mutual thermal coupling in trench isolated SiGe:C HBTs featuring peak fT and peak fmax of ∼300GHz and ∼400GHz, respectively. Inter- and intra-device thermal coupling parameters are extracted on specially designed test structures consisting of a five-finger HBT and a five-transistor array. The obtained coupling parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between devices. Very good agreement is achieved between circuit simulations and measurements.
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Dates et versions

hal-00978734 , version 1 (14-04-2014)

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  • HAL Id : hal-00978734 , version 1

Citer

M. Weiss, A.K. Sahoo, C. Maneux, S. Fregonese, T. Zimmer. Mutual thermal coupling in SiGe:C HBTs. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Sep 2013, Curitiba, Brazil. pp.Article number 6676131. ⟨hal-00978734⟩
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