Conference Papers
Year : 2014
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https://hal.science/hal-00976633
Submitted on : Thursday, April 10, 2014-11:01:42 AM
Last modification on : Friday, March 24, 2023-2:52:58 PM
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- HAL Id : hal-00976633 , version 1
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Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub. Pushing the limits of GaN-on-silicon device breakdown voltage for high power applications. CMOS Emerging Technologies Research Symposium, 2014, Grenoble, France. ⟨hal-00976633⟩
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