Pushing the limits of GaN-on-silicon device breakdown voltage for high power applications - Archive ouverte HAL Access content directly
Conference Papers Year : 2014
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hal-00976633 , version 1 (10-04-2014)

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  • HAL Id : hal-00976633 , version 1

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Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub. Pushing the limits of GaN-on-silicon device breakdown voltage for high power applications. CMOS Emerging Technologies Research Symposium, 2014, Grenoble, France. ⟨hal-00976633⟩
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