Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster) - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster)

Résumé

We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.
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hal-00975792 , version 1 (09-04-2014)

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  • HAL Id : hal-00975792 , version 1

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Mireille Cuniot-Ponsard, Irma Saraswati, Suk-Min Ko, Mathieu Halbwax, Yong-Hoon Cho, et al.. Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster). Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. ⟨hal-00975792⟩
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