Electrical characterization of semiconductor nanowires by scanning tunneling microscopy - Archive ouverte HAL
Communication Dans Un Congrès Année : 2014

Electrical characterization of semiconductor nanowires by scanning tunneling microscopy

Résumé

In order to understand the structural and electronic properties of semiconductor nanowires, scanning tunneling microscopy is an appealing technique that can supplement transmission electron microscopies and conventional electrical characterization techniques. It is able to probe the surface of semiconductor materials at the atomic scale and can be successfully applied to study the nanofaceting morphology, the atomic structure and the surface composition of oxide-free nanowire sidewalls. Based on the advantages provided by the unique geometry of semiconductor nanowires for a low-cost and efficient integration into nanoscale devices, additional characterization schemes performed with multiple probe scanning tunneling microscopy are also presented to get a deeper understanding of their transport properties.
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Dates et versions

hal-00974539 , version 1 (07-04-2014)

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Corentin Durand, Pierre Capiod, Maxime Berthe, Tao Xu, Jean-Philippe Nys, et al.. Electrical characterization of semiconductor nanowires by scanning tunneling microscopy. SPIE Photonics West, OPTO, Conference 8996 - Quantum Dots and Nanostructures : Synthesis, Characterization, and Modeling XI, 2014, San Francisco, CA, United States. 89960E, 10 p., ⟨10.1117/12.2042767⟩. ⟨hal-00974539⟩
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