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Article Dans Une Revue SCIENTIFIC WORLD JOURNAL Année : 2014

100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications

Résumé

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies of 100/125 GHz together with minimum noise figure dB and associated gain dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.
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Origine : Publication financée par une institution
Licence : CC BY - Paternité

Dates et versions

hal-00969148 , version 1 (12-07-2022)

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Paternité

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Cyrille Gardès, Sonia Bagumako, L. Desplanque, Nicolas Wichmann, S. Bollaert, et al.. 100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications. SCIENTIFIC WORLD JOURNAL, 2014, 2014, 136340, 6 p. ⟨10.1155/2014/136340⟩. ⟨hal-00969148⟩
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