PbS quantum dots and ZnO nanowires for 3rd generation solar cells - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

PbS quantum dots and ZnO nanowires for 3rd generation solar cells

Résumé

Semiconductor nanostructures with low dimensions such as quantum dots and nanowires are considered as important building blocks for the third generation solar cells, due to their useful optical and electrical properties. Quantum dots and nanowires hold promising potency to improve the performance of solar cells by enhancing light trapping and light absorption, exciton generation and photo-excited carrier transferring and collection. Quantum dot sensitized solar cells consist of three components: semiconductor quantum dots, one dimensional (1D) metal oxide n-type and hole-transport layer materials. Quantum dots are characterized by a tunable absorption, and multiple exciton generation. Nanowires are of great importance because of their large surface area, direct light absorption and light trapping between boundaries of the nanowire arrays. In this work, the synthesis and the characterization of zinc oxide (ZnO) nanowires are presented. We have also investigated the in-situ growth of lead sulfide (PbS) quantum dots on the nanowires, highlighting the importance of electron transfer process from quantum dots to nanowires for photovoltaic applications.
Fichier non déposé

Dates et versions

hal-00964524 , version 1 (24-03-2014)

Identifiants

  • HAL Id : hal-00964524 , version 1

Citer

Basma El Zein, El Hadj Dogheche, Enrico Traversa. PbS quantum dots and ZnO nanowires for 3rd generation solar cells. European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014, Lille, France. ⟨hal-00964524⟩
186 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More