Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2014

Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition

Résumé

We report the measurement of the (r13, r33) Pockels electro-optic coefficients in a GaN thin film grown on a Si(111) substrate. The converse piezoelectric (d33) and electro-absorptive coefficients are simultaneously determined. Single crystalline GaN epitaxial layers were grown with a AlGaN buffer layer by metal organic chemical vapor deposition, and their structural and optical properties were systematically investigated. The electro-optic, converse piezoelectric, and electro-absorptive coefficients of the GaN layer are determined using an original method. A semi-transparent gold electrode is deposited on the top of the GaN layer, and an alternating voltage is applied between top and bottom electrodes. The coefficients are simultaneously and analytically determined from the measurement of the electric-field-induced variation ΔR(θ) in the reflectivity of the Au/GaN/buffer/Si stack, versus incident angle and light polarization. The method also enables to determine the GaN layer polarity. The results obtained for a Ga-face [0001] GaN layer when using a modulation frequency of 230 Hz are for the electro-optic coefficients r13 = +1.00 ± 0.02 pm/V, r33 = +1.60 ± 0.05 pm/V at 633 nm, and for the converse piezoelectric coefficient d33 = +4.59 ± 0.03 pm/V. The value measured for the electro-absorptive variation at 633 nm is Δko/ΔE = +0.77 ± 0.05 pm/V.
Fichier principal
Vignette du fichier
00964286.pdf (1 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-00964286 , version 1 (16-11-2015)

Identifiants

Citer

Mireille Cuniot-Ponsard, Irma Saraswati, S.M. Ko, Mathieu Halbwax, Y.H. Cho, et al.. Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition. Applied Physics Letters, 2014, 104, 101908, 4 p. ⟨10.1063/1.4868427⟩. ⟨hal-00964286⟩
222 Consultations
423 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More