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Communication Dans Un Congrès Année : 2014

Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance

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hal-00962375 , version 1 (21-03-2014)

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  • HAL Id : hal-00962375 , version 1

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Mohamed Salah Khenissa, D. Mele, Mohamed Moez Belhaj, Ivy Colambo, Emiliano Pallecchi, et al.. Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance. 4th Graphene Conference, Graphene 2014, May 2014, Toulouse, France. 2 p. ⟨hal-00962375⟩
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