Deterministic placement of doping atoms on hydroxylated surfaces
Résumé
An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated on non-porous silica and successfully transferred onto silicon wafers.
Domaines
Sciences de l'ingénieur [physics]| Origine | Fichiers produits par l'(les) auteur(s) |
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