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Article Dans Une Revue Journal of Physics D: Applied Physics Année : 2014

Molecular Dynamics simulations of clusters and thin film growth in the context of plasma sputtering deposition

Résumé

Carrying out molecular Dynamics simulations is a relevant way for understanding growth phenomena at the atomic scale. Initial conditions are defined for reproducing deposition conditions of plasma sputtering experiments. Two case studies are developed for highlighting the implementation of molecular dynamics simulations in the context of plasma sputtering deposition: ZrxCu1-x metallic glass and AlCoCrCuFeNi high entropy alloy thin films deposited onto silicon. Effects of depositing atom kinetic energies and atomic composition are studied in order to predict evolution of morphologies and atomic structure of MD grown thin films. Experimental and simulated X-ray diffraction patterns are compared.

Domaines

Plasmas
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Dates et versions

hal-00955501 , version 1 (04-03-2014)

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  • HAL Id : hal-00955501 , version 1

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Lu Xie, Pascal Brault, Jean-Marc Bauchire, Anne-Lise Thomann, Larbi Bedra. Molecular Dynamics simulations of clusters and thin film growth in the context of plasma sputtering deposition. Journal of Physics D: Applied Physics, 2014, 47, 224004 (17pp). ⟨hal-00955501⟩
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