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Article Dans Une Revue Scripta Materialia Année : 2013

Application of sputtered ruthenium nitride thin films as electrode material for energy-storage devices

B. Laik
P. Boulet
F. Capon
  • Fonction : Auteur
Thierry Brousse
  • Fonction : Auteur
  • PersonId : 917389
J. F. Pierson

Résumé

RuN films that crystallized in the ZnS-like structure with [1 1 1] preferred orientation have been deposited by reactive sputtering. Preliminary results are reported on the electrochemical properties of such films as electrode materials for supercapacitors and lithium-ion batteries. Cyclic voltammetric experiments indicate an attractive capacitance value of 37 F g−1. Moreover, galvanostatic measurements indicate that RuN films reversibly react with lithium through a conversion reaction with Ru(0) nanoparticle formation. A high capacity value of ∼700 mAh g−1 at C/2 rate is achievable.

Dates et versions

hal-00950598 , version 1 (21-02-2014)

Identifiants

Citer

S. Bouhtiyya, R. Lucio Porto, B. Laik, P. Boulet, F. Capon, et al.. Application of sputtered ruthenium nitride thin films as electrode material for energy-storage devices. Scripta Materialia, 2013, 68 (9), pp.659. ⟨10.1016/j.scriptamat.2013.01.030⟩. ⟨hal-00950598⟩
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