30 dBm P1dB and 4 dB Insertion Losses Optimized 4G Antenna Tuner Fully Integrated in a 130 nm CMOS SOI Technology - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

30 dBm P1dB and 4 dB Insertion Losses Optimized 4G Antenna Tuner Fully Integrated in a 130 nm CMOS SOI Technology

Résumé

In order to counteract the antenna impedance mismatch due to its interaction with the environment, one solution is to add an antenna tuner between the front-end module and the antenna. In this paper, we present the large signal measurement of a 4G integrated antenna tuner, previously presented in [1]. The tuner has been realized in STMicroelectronics 130 nm CMOS SOI technology and operates between 2500 MHz and 2690 MHz. We also propose some improvement to reduce the design parasitics, illustrated by the small signal performances of the optimized circuit
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Dates et versions

hal-00945752 , version 1 (12-02-2014)

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Florence Sonnerat, Romain Pilard, Frédéric Gianesello, Sébastien Jan, François Le Pennec, et al.. 30 dBm P1dB and 4 dB Insertion Losses Optimized 4G Antenna Tuner Fully Integrated in a 130 nm CMOS SOI Technology. SiRF 2013 : 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Jan 2013, Austin, United States. pp.39-41, ⟨10.1109/SiRF.2013.6489425⟩. ⟨hal-00945752⟩
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