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Communication Dans Un Congrès Année : 2006

Plasma etching challenges of new materials involved in gate stack patterning for sub-45 nm technological nodes

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hal-00944953 , version 1 (11-02-2014)

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  • HAL Id : hal-00944953 , version 1

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O. Joubert, A. Le Gouil, R. Ramos, M. Helot, G. Cunge, et al.. Plasma etching challenges of new materials involved in gate stack patterning for sub-45 nm technological nodes. 209th ECS meeting, Denver, May 2006, Denver, United States. ⟨hal-00944953⟩
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