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Communication Dans Un Congrès Année : 2013

E-beam fabricated GaN Schottky diodes : high-frequency and non-linear properties

Résumé

E-Beam processed GaN-based Schottky diodes for microwave, millimeter-wave power applications were characterized under both small-signal and large-signal conditions. A Large-Signal Network Analyzer was used and equivalent circuit models were obtained by combining small signal S-parameter data with large-signal time-domain waveform optimization. The impact of anode diameter size and layer design were investigated and the active layer thickness dependence of the intrinsic elements was analyzed. Large-signal measurements allowed device non-linearity evaluation.
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Dates et versions

hal-00944029 , version 1 (11-02-2014)

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Citer

C. Jin, M. Zaknoune, D. Ducatteau, D. Pavlidis. E-beam fabricated GaN Schottky diodes : high-frequency and non-linear properties. 61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper TH3H-5, 4 p., ⟨10.1109/MWSYM.2013.6697734⟩. ⟨hal-00944029⟩
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