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Article Dans Une Revue Physical Review X Année : 2014

Dirac cones, topological edge states, and nontrivial flat bands in two-dimensional semiconductors with a honeycomb nanogeometry

Résumé

We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic lattice and the overall geometry influence the band structure, revealing materials with unusual electronic properties. In rocksalt Pb chalcogenides, the expected Dirac-type features are clouded by a complex band structure. However, in the case of zinc-blende Cd-chalcogenide semiconductors, the honeycomb nanogeometry leads to rich band structures, including, in the conduction band, Dirac cones at two distinct energies and nontrivial flat bands and, in the valence band, topological edge states. These edge states are present in several electronic gaps opened in the valence band by the spin-orbit coupling and the quantum confinement in the honeycomb geometry. The lowest Dirac conduction band has S-orbital character and is equivalent to the π-π⋆ band of graphene but with renormalized couplings. The conduction bands higher in energy have no counterpart in graphene; they combine a Dirac cone and flat bands because of their P-orbital character. We show that the width of the Dirac bands varies between tens and hundreds of meV. These systems emerge as remarkable platforms for studying complex electronic phases starting from conventional semiconductors. Recent advancements in colloidal chemistry indicate that these materials can be synthesized from semiconductor nanocrystals.
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hal-00939871 , version 1 (08-07-2022)

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Efterpi Kalesaki, Christophe Delerue, Cristiane Morais Smith, Wouter Beugeling, Guy Allan, et al.. Dirac cones, topological edge states, and nontrivial flat bands in two-dimensional semiconductors with a honeycomb nanogeometry. Physical Review X, 2014, 4 (1), pp.0110101. ⟨10.1103/PhysRevX.4.011010⟩. ⟨hal-00939871⟩
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