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Article Dans Une Revue IEEE Transactions on Electromagnetic Compatibility Année : 2013

Characterization of Changes in LDO Susceptibility after Electrical Stress

Résumé

The low dropout voltage regulator (LDO) is very sensitive to electromagnetic interference (EMI) coupled onto the power supply, with concomitant output voltage offset. Most EMC analyses of the LDO do not account for the effects of ageing. However, device ageing can degrade the physical parameters of semiconductor devices and can worsen the effect of EMI. This paper analyses the drift in LDO immunity after accelerated ageing. A large number of measurements which show the variations in the test results for DC characteristic, impedance and immunity reveal increasing susceptibility after electrical accelerated ageing.

Domaines

Electronique
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Dates et versions

hal-00937780 , version 1 (28-01-2014)

Identifiants

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Jianfei Wu, Alexandre Boyer, Jiancheng Li, Sonia Ben Dhia, Rongjun Shen. Characterization of Changes in LDO Susceptibility after Electrical Stress. IEEE Transactions on Electromagnetic Compatibility, 2013, 55 (5), pp.883-890. ⟨10.1109/TEMC.2013.2242471⟩. ⟨hal-00937780⟩
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