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Chapitre D'ouvrage Année : 2013

Millimeter-wave characterization of silicon devices under small-signal regime : instruments and measurement methodologies

Résumé

This chapter aims to describe experimental tools and techniques used for on-wafer millimeter (mm)-wave characterizations of silicon-based devices under the small-signal regime. We discuss the basics of scattering parameters (S parameters), high-frequency (HF) noise concept and measurement facilities, and expert details concerning experimental procedures. In this chapter, we describe first the basic notions of the S-parameters concept and its limitations, as well of as those HF noise. Secondly, the main experimental tools such as mm-wave vectorial network analyzer, noise setup, and on-wafer station are depicted. The third part concerns the description and the methodology of on-wafer calibration and de-embedding techniques applied for mm-wave advanced silicon devices. Finally, the last section focuses on the presentation and description of several examples of device characterizations. The main objective of this chapter is to propose a tradeoff between basic information and details of experience.
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Dates et versions

hal-00926037 , version 1 (09-01-2014)

Identifiants

Citer

Gilles Dambrine. Millimeter-wave characterization of silicon devices under small-signal regime : instruments and measurement methodologies. Crupi G., Schreurs D.M. Microwave de-embedding - From theory to applications, Academic Press, chapter 2, 47-96, 2013, 978-0-12-401700-9. ⟨10.1016/B978-0-12-401700-9.00002-1⟩. ⟨hal-00926037⟩
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