AlN/IDT/AlN/Sapphire as packageless structure for SAW applications in harsh environments - Archive ouverte HAL Access content directly
Conference Papers Year : 2012

AlN/IDT/AlN/Sapphire as packageless structure for SAW applications in harsh environments

Abstract

Packageless heterostructure AlN/IDT/AlN/Sapphire was investigated as a solution protection of the interdigital transducer against agglomeration phenomena at high temperature. For this purpose, the performance of conventional IDT/AlN/Sapphire and protected AlN/IDT/AlN/Sapphire heterostructures were compared. The capability of AlN protective thin film to minimize the deterioration of electrodes was shown.
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hal-00923022 , version 1 (01-01-2014)

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Ouarda Legrani, Omar Elmazria, A. Bartasyte, Thierry Aubert, Abdelkrim Talbi. AlN/IDT/AlN/Sapphire as packageless structure for SAW applications in harsh environments. IEEE International Ultrasonics Symposium, 2012, Germany. pp.2102-2105, ⟨10.1109/ULTSYM.2012.0525⟩. ⟨hal-00923022⟩
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