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Article Dans Une Revue IEEE Sensors Journal Année : 2013

AlN/Sapphire: a promising structure for high temperature and high frequency SAW devices

Omar Elmazria
Thierry Aubert
Badreddine Assouar
Ouarda Legrani
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Résumé

In this work, the performance of AlN/Sapphire structure in high frequencies is investigated. Several SAW devices were fabricated with various designs (free-space delay, wavelength, metallization ratio, ...) to study simultaneously different parameters (acoustic velocity, electromechanical coupling (K2), acoustic propagation loss, TCF) versus frequency and temperature. Experimental results showed that as expected, " increases with temperature while K2 is enhanced at high temperatures. Due to the antagonistic evolution of these two parameters, insertion loss decreases or increases as function of the free-space delay. We also demonstrated that this structure allows fabrication of devices operating up to 1.5 GHz and that the frequency varies linearly with temperature.
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Dates et versions

hal-00923015 , version 1 (17-04-2020)

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Eloi Blampain, Omar Elmazria, Thierry Aubert, Badreddine Assouar, Ouarda Legrani. AlN/Sapphire: a promising structure for high temperature and high frequency SAW devices. IEEE Sensors Journal, 2013, 13 (12), pp.4607-4612. ⟨10.1109/JSEN.2013.2271863⟩. ⟨hal-00923015⟩
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