AlN/Sapphire: a promising structure for high temperature and high frequency SAW devices
Résumé
In this work, the performance of AlN/Sapphire structure in high frequencies is investigated. Several SAW devices were fabricated with various designs (free-space delay, wavelength, metallization ratio, ...) to study simultaneously different parameters (acoustic velocity, electromechanical coupling (K2), acoustic propagation loss, TCF) versus frequency and temperature. Experimental results showed that as expected, " increases with temperature while K2 is enhanced at high temperatures. Due to the antagonistic evolution of these two parameters, insertion loss decreases or increases as function of the free-space delay. We also demonstrated that this structure allows fabrication of devices operating up to 1.5 GHz and that the frequency varies linearly with temperature.
Origine | Fichiers produits par l'(les) auteur(s) |
---|
Loading...