Effect of process parameters on the properties of electron cyclotron resonance plasma deposited silicon-oxynitride - Archive ouverte HAL Access content directly
Journal Articles Journal of Non-Crystalline Solids Year : 1995

Effect of process parameters on the properties of electron cyclotron resonance plasma deposited silicon-oxynitride

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hal-00915405 , version 1 (07-12-2013)

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  • HAL Id : hal-00915405 , version 1

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Pavel Bulkin, P. L. Swart, B. M. Lacquet. Effect of process parameters on the properties of electron cyclotron resonance plasma deposited silicon-oxynitride. Journal of Non-Crystalline Solids, 1995, pp.403-408. ⟨hal-00915405⟩
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