Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics
Résumé
In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f T /f MAX amounting to 150/160 GHz for n-type and 100/130 GHz for p-type, respectively. Minimal noise figure and associated gain NF min /G ass of 0.57 dB/17.8 dB and 0.57 dB/17.0 dB are measured at 10 GHz for n-and p-MOSFETs, respectively.
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2013-Lecavelier-et-al-SolidStateElectronics-Radio-frequency-nf.pdf (2.56 Mo)
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