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Article Dans Une Revue Solid-State Electronics Année : 2013

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

Marie Lesecq
Francois Danneville
Y. Tagro
  • Fonction : Auteur
Sylvie Lepilliet
Virginie Hoel
David Troadec
D. Gloria
  • Fonction : Auteur
C. Raynaud
Emmanuel Dubois

Résumé

In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f T /f MAX amounting to 150/160 GHz for n-type and 100/130 GHz for p-type, respectively. Minimal noise figure and associated gain NF min /G ass of 0.57 dB/17.8 dB and 0.57 dB/17.0 dB are measured at 10 GHz for n-and p-MOSFETs, respectively.
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Dates et versions

hal-00914203 , version 1 (22-08-2022)

Identifiants

Citer

A. Lecavelier Des Etangs-Levallois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, et al.. Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics. Solid-State Electronics, 2013, 90, pp.73-78. ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00914203⟩

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