Nanostructuration of cr/si layers induced by ion beam mixing. - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

Nanostructuration of cr/si layers induced by ion beam mixing.

Résumé

This work clearly demonstrates that the X Ray Reflectometry technique (XRR), extensively used to assess the quality of microelectronic devices can be a useful tool to study the first stages of ion beam mixing. This technique allows measuring the evolution of the Si concentration profile in irradiated Cr/Si layers. From the analysis of the XRR profiles, it clearly appears that the Si profile cannot be described by a simple error function.
Fichier non déposé

Dates et versions

hal-00913647 , version 1 (04-12-2013)

Identifiants

Citer

Laurence Lunéville, Ludovic Largeau, Cyrile Deranlot, Nathalie Moncoffre, Yves Serruys, et al.. Nanostructuration of cr/si layers induced by ion beam mixing.. Symposium HH – Advances in Materials for Nuclear Energy, Nov 2012, Boston, France. pp.61-68, ⟨10.1557/opl.2013.196⟩. ⟨hal-00913647⟩
241 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More