High performance AlGaN metal-semiconductor-metal ultraviolet photo detectors
Résumé
In this paper, we present Al0.25Ga0.75N ultraviolet Schottky barrier photodetectors on Al2O3, that wasmodeled using The two-dimensional device simulator Silvaco and ATLAS. It was found that the device has verylow dark current, with the applied bias below 1 V, the dark current was below 16 pA and the peak responsivity of0.07A/W was achieved at 308nm. We have performed a comparison between our modeling and the experimentalresults