Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2013

Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology

Abstract

Impact of NBTI degradation on the SET sensitivity of 65 nm CMOS test structures is investigated. Pre- and post-aging SET laser thresholds measurements on chains of gates indicate a decrease of SET sensitivity due to NBTI.

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Dates and versions

hal-00880480 , version 1 (06-11-2013)

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Issam El Moukhtari, Vincent Pouget, Frédéric Darracq, Camille Larue, Philippe Perdu, et al.. Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology. IEEE Transactions on Nuclear Science, 2013, 60 (4), pp.2635-2639. ⟨10.1109/TNS.2012.2231437⟩. ⟨hal-00880480⟩
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