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Article Dans Une Revue Microelectronics Reliability Année : 2013

Characterization and modeling of laser-induced single-event burn-out in SiC power diodes

Résumé

We present results of laser testing of radiation-induced single event burn-out (SEB) in two 600 V Silicon Carbide Schottky power diodes using two-photon absorption at blue wavelength. Transient currents and destructive events are observed and analyzed. A simple physical model of the laser induced current in the tested devices is proposed to evaluate the impact of experimental parameters on the occurrence of an SEB.

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Dates et versions

hal-00880471 , version 1 (06-11-2013)

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Nogaye Mbaye, Vincent Pouget, Frédéric Darracq, D. Lewis. Characterization and modeling of laser-induced single-event burn-out in SiC power diodes. Microelectronics Reliability, 2013, 53 (9-11), pp.1315-1319. ⟨10.1016/j.microrel.2013.07.113⟩. ⟨hal-00880471⟩
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