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Communication Dans Un Congrès Année : 2013

MEMS HIGH-DOSES RADIATION SENSOR

Résumé

New MEMS sensor for detection of high doses (above 10 kGy) of radiation has been presented. The sensor is made of silicon and glass in a form of anodically bonded sandwich 9 × 16 × 2.6 mm3. The sensor contains chamber with small portion of high density polyethylene (HDPE) and thin silicon membrane. Irradiation releases gaseous hydrogen, which flows from the chamber to the membrane. For known radiation dose pressure of hydrogen destroys the membrane, what is optically noticed. The sensor show good detectability of doses of radiation up to 120 kGy.
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Dates et versions

hal-00878241 , version 1 (29-10-2013)

Identifiants

  • HAL Id : hal-00878241 , version 1

Citer

I. Augustyniak, J. Dziuban, P. Knapkiewicz, Matusiak M, Michal Olszacki, et al.. MEMS HIGH-DOSES RADIATION SENSOR. Transducers, Jun 2013, Barcelone, Spain. pp.T4A.005. ⟨hal-00878241⟩
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