Development of nanometer-sacle probing techniques have become imperative for current flow and resistivity measurements with nanometer scale spatial resolution in a variety of materials and devices. The use of weakly coupled scanning tunneling probes to detect transport phenomena appears to be an appropriate approach. We will describe a new setup, where the unique combination of four scanning tunneling microscope probe tips and a scanning electron microscope in ultra high vacuum allows 4-point contact measurements and function testing of nanodevices within complex structures and integrated circuits. Such a tool has considerable potential, as it does not need any extra electrodes on the specimen and enables arbitrary arrangements of probes, with the highest spatial resolution, on isolated semiconductor nanowires, for example.