AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD

Résumé

AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and max = 0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling 16 W/mm static heat dissipation
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Dates et versions

hal-00877773 , version 1 (29-10-2013)

Identifiants

  • HAL Id : hal-00877773 , version 1

Citer

Philippe Altuntas, N. Defrance, Marie Lesecq, Adrien Cutivet, Alain Agboton, et al.. AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD. 22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. paper 5.6, 2 p. ⟨hal-00877773⟩
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